Core Technology
Development History
In 2005 Rongxin Power Electronics established a ‘High Power IGBT Technology’ business line in Anshan China . This business line, which has subsequently become the independent business RXHK, commenced the development activities for a high power clamped IGBT devices. It’s first milestone was the design and successful testing of the world’s highest power Medium Voltage Convertor (MVC), rating 7500kW in 2008.
In 2009 the High Power IGBT Technology team secured a Chinese state funded R&D project to develop the necessary technology for a 35kV ±320Mvar STATCOM. This was a technology that China Southern Grid (CSG) had identified was required to manage the risk of voltage collapse in the case of commutation failure in one of the several large HVDC converter stations feeding into the CSG grid in Guandong. As part of this R&D project the team evaluated the range of power electronics devices available and based on its superior performance across a range of features selected the Press Pack IGBT device.
In 2011, under a seperate design and manufacture contract, the team successfully delivered its first MMC technology STATCOM (±320Mvar).
RXHK Key Device - Press Pack (PP-IGBT)
Technical Characteristics of PP-IGBT
- Compact package and chip connection structure, low stray inductance
- Double-sided heat dissipation, low thermal resistance, conducive to cooling
- Short-circuit failure mode, which is beneficial to device redundancy and reliability design
- Explosion-proof characteristics, help to prevent the expansion of faults
- Leadless welding, reducing rigid connection between materials with different thermal expansion coefficients, giving high reliability
- Collector and emitter are distributed on both sides of the device, which is beneficial for series application
